TTFS5116PLTWG ON Semiconductor

NTTFS5116PLTWG , ON Semiconductor

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Specifications

Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	MOSFET
RoHS
Forward Transconductance - Min	11 S
Rds On - Drain-Source Resistance	72 mOhms
Rise Time	58 ns
Fall Time	37 ns
Mounting Style	SMD/SMT
Pd - Power Dissipation	40 W
Product Type	MOSFET
Number Of Channels	1 Channel
Package / Case	WDFN-8
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Series	NTTFS5116PL
Packaging	Cut Tape or Reel
Brand	ON Semiconductor
Configuration	Single
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Vgs - Gate-Source Voltage	4.5 V
Vgs Th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	25 nC
Technology	Si
Id - Continuous Drain Current	5.7 A
Vds - Drain-Source Breakdown Voltage	60 V
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	15 ns
Factory Pack Quantity	5000
Subcategory	MOSFETs

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NTTFS5116PLTWG , ON Semiconductor